国家/地区 China（15）
关键词 SCHOTTKY CONTACT（15）
出版物 DIAMOND RELATED MAT.（2）
出版时间 2023（5） 2022（4） 2019（2） 2021（2）
机构
作者 DAI XQ（2） LI YP（2） LI Z（2） MA XG（2）
XIA CX（2） ZHANG JH（2）

Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr-ZnO Schottky contact by I-V-T

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

LI YP, LI YF, ZHANG JH

Interfacial interaction and Schottky contact of two-dimensional WS2/graphene heterostructure

ACTA PHYSICA SINICA

GUO LJ, HU JS, MA XG, XIANG J

Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode

JOURNAL OF NANOPHOTONICS

SUN CZ, CAI WW, HONG RD, CAI JF, WU ZY

SnS nanoribbon graphene mixed-dimensional heterostructures: Group VII passivation and quantum size effects

JOURNAL OF ALLOYS COMPOUNDS

XIA CX, FANG LZ, LI XP, XIONG WQ, GENG ZD

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZHANG ZC, SHI TL, HE JJ, LIU CS, MENG L, YAN XH

Electronic properties and tunable Schottky barrier of non-Janus MoSSe/graphene heterostructures

JOURNAL OF PHYSICS DAPPLIED PHYSICS

YU JQ, KE SS, LU HF

A novel C6BN/graphene heterostructure: Tunable Schottky barrier via interlayer spacing and external electric field

DIAMOND RELATED MATERIALS

GONG X, YUAN G, MA XG, LV H, ZHANG F, HE J, ZOU W

Electronic properties and controllable Schottky barrier of Janus HfSSe and graphene van der waals heterostructure

SOLID STATE COMMUNICATIONS

ZHAO X, WANG MM, PEI M, XIA CX, WANG TX, YANG YL, DAI XQ, WEI SY

Effect of annealing on electrical characteristics of graphene/Al-Zr co-doped ZnO Schottky contact

THIN SOLID FILMS

LI YP, ZHANG JH, ZHANG H

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

JOURNAL OF PHYSICS CHEMISTRY OF SOLIDS

ZHANG WJ, HAO GQ, ZHANG R, XU JH, YE XJ, LI HB