国家/地区 China（3）
关键词 SIC SUBSTRATE（3）
出版物 CHINESE PHYSICS B（3）
出版时间
机构
作者 WANG DC（2） ZHANG YM（2）

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substratesl

CHINESE PHYSICS B

WANG DC, ZHANG YM

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

CHINESE PHYSICS B

CHEN LL, GUO LW, LIU Y, LI ZL, HUANG J, LU W

Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition

CHINESE PHYSICS B

WANG DC, ZHANG YM, ZHANG YM, LEI TM, GUO H, WANG YH, TANG XY, WANG H