国家/地区 Japan（5）
关键词 SILICON CARBIDE（5）
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Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering

APPLIED SPECTROSCOPY

UEMURA S, VANTASIN S, KITAHAMA Y, TANAKA YY, SUZUKI T, DOUJIMA D, KANEKO T, OZAKI Y

Growth of graphene from SiC{0001} surfaces and its mechanisms

SEMICONDUCTOR SCIENCE TECHNOLOGY

NORIMATSU W, KUSUNOKI M

Spin-injection into epitaxial graphene on silicon carbide

JOURNAL OF CRYSTAL GROWTH

KONISHI K, CUI ZX, HIRAKI T, YOH KJ

Controllable gallium melt-assisted interfacial graphene growth on silicon carbide

DIAMOND RELATED MATERIALS

LEE MV, HIURA H, TYURNINA AV, TSUKAGOSHI K

Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)

APPLIED SURFACE SCIENCE

HIBINO H, KAGESHIMA H, GUO FZ, MAEDA F, KOTSUGI M, WATANABE Y