国家/地区 China（2）
关键词 SILICON CARBIDE（8）
出版物
出版时间 2021（8）
机构
作者

Electronic band structure of Bi-intercalate layers in graphene and SiC(0001)

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

SOHN Y, JUNG SW, GOHLER F, SHIN WJ, CHA S, SEYLLER T, KIM KS

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

CARBON

RATHORE S, PATEL DK, THAKUR MK, HAIDER G, KALBAC M, KRUSKOPF M, LIU CE, RIGOSI AF, ELMQUIST RE, LIANG CT, HONG PD

Numerical Study of Graphene/Au/SiC Waveguide-Based Surface Plasmon Resonance Sensor

BIOSENSORSBASEL

DU W, MILLER L, ZHAO F

Preparation of large area graphene on SiC(000-1) by moderate vacuum technology

JOURNAL OF CRYSTAL GROWTH

ZHAO XD, DENG X, LI MY, WANG YM, MAO KL, YANG YB, ZHANG MD

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)

ADVANCED MATERIALS INTERFACES

KOTSAKIDIS JC, CURRIE M, GRUBISICCABO A, TADICH A, MYERSWARD RL, DEJARLD M, DANIELS KM, LIU C, EDMONDS MT, DE PARGA ALV, FUHRER MS, GASKILL DK

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H-SiC

CURRENT APPLIED PHYSICS

CIUK T, KASZUB W, KOSCIEWICZ K, DOBROWOLSKI A, JAGIELLO J, CHAMRYGA A, GACA J, WOJCIK M, CZOLAK D, STANCZYK B, PRZYBOROWSKA K, KOZLOWSKI R, KOZUBAL M, MICHALOWSKI PP, SZARY MJ, KAMINSKI P

Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion

DIAMOND RELATED MATERIALS

JIA YP, SUN XJ, SHI ZM, JIANG K, WU T, LIANG HW, CUI XZ, LU W, LI DB

Impact of oxygen adsorption on the electronic properties and contact type of a defective epitaxial graphene-SiC interface

COMPUTATIONAL THEORETICAL CHEMISTRY

HUELMO CP, DENIS PA