国家/地区 India（4）
关键词 SUBTHRESHOLD SWING（4）
出版物
出版时间
机构
作者 PANDIAN MK（2） SAMUEL TSA（2） VIMALA P（2）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

A 10 nm Asymmetric Graphene-Rhenium Disulfide Field-Effect Transistor for High-Speed Application

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

CHAWLA R, SINGHAL P, GARG AK

Simulation insights of a new dual gate graphene nano-ribbon tunnel field-effect transistors for THz applications

DIAMOND RELATED MATERIALS

NAYANA GH, VIMALA P, PANDIAN MK, SAMUEL TSA

Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon

JOURNAL OF ELECTRONIC MATERIALS

SAMUEL TSA, VENKATESH M, PANDIAN MK, VIMALA P