国家/地区 Japan（3）
关键词 THERMIONIC EMISSION（3）
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Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction

ACS APPLIED MATERIALS INTERFACES

TABATA H, SATO Y, OI K, KUBO O, KATAYAMA M

Electron Emission from Individual Graphene Nanoribbons Driven by Internal Electric Field

ACS NANO

WEI XL, BANDO Y, GOLBERG D

A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

IEEE TRANSACTIONS ON ELECTRON DEVICES

SATOU A, TAMAMUSHI G, SUGAWARA K, MITSUSHIO J, RYZHII V, OTSUJI T