国家/地区 Korea（2）
关键词 THREADING DISLOCATION（2）
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Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

ACS APPLIED MATERIALS INTERFACES

KE WC, TESFAY ST, SEONG TY, LIANG ZY, CHIANG CY, CHEN CY, SON W, CHANG KJ, LIN JC

Microstructures of GaN Thin Films Grown on Graphene Layers

ADVANCED MATERIALS

YOO H, CHUNG K, CHOI YS, KANG CS, OH KH, KIM M, YI GC