国家/地区 China（2） Italy（2）
关键词 TRANSFER CHARACTERISTIC（8）
出版物
出版时间 2013（2） 2015（2） 2016（2）
机构 UNIV SALERNO（2）
作者 DI BARTOLOME.（2） GIUBILEO F（2） LUPINA G（2） ROMEO F（2）
SCHROEDER T（2）

Effects of vacancy defects on graphene nanoribbon field effect transistor

MICRO NANO LETTERS

CHANG S, ZHANG YJ, HUANG QJ, WANG H, WANG GF

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

DIAMOND RELATED MATERIALS

DI BARTOLOMEO A, SANTANDREA S, GIUBILEO F, ROMEO F, PETROSINO M, CITRO R, BARBARA P, LUPINA G, SCHROEDER T, RUBINO A

Irradiation of graphene field effect transistors with highly charged ions

NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION BBEAM INTERACTIONS WITH MATERIALS ATOMS

ERNST P, KOZUBEK R, MADAUSS L, SONNTAG J, LORKE A, SCHLEBERGER M

Improving graphene non-volatile memory using self-aligned gate

ELECTRONICS LETTERS

LEE K, KIM O

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

NANOTECHNOLOGY

DI BARTOLOMEO A, GIUBILEO F, ROMEO F, SABATINO P, CARAPELLA G, IEMMO L, SCHROEDER T, LUPINA G

Graphene oxide-based non-volatile organic field effect memory transistors

IET CIRCUITS DEVICES SYSTEMS

ALAABDLQADER HS, SLEIMAN A, SAYERS P, MABROOK MF

Effects of morphology and charge transport of PDIF-CN2/graphene TFT

JOURNAL OF MOLECULAR STRUCTURE

MATHEW J, CASSESE D

Obvious difference between protons and electrons irradiation on the performance of graphene devices

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

CUI NY, LIU YM, JIANG HF, GUO JL