国家/地区 Usa（2）
关键词 TRANSISTOR（4）
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2009（3）
机构
作者 LIN YM（2）

Intrinsic limits of subthreshold slope in biased bilayer graphene transistor

APPLIED PHYSICS LETTERS

MAJUMDAR K, MURALI KVRM, BHAT N, LIN YM

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Behavior of a chemically doped graphene junction

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P

Logic gates with a single graphene transistor

APPLIED PHYSICS LETTERS

SORDAN R, TRAVERSI F, RUSSO V