国家/地区 China（3） India（3） Korea（3）
关键词 TRANSPORT PROPERTIE（14）
出版物 DIAMOND RELATED MAT.（2） NANOTECHNOLOGY（2）
出版时间 2021（14）
机构
作者 RI NC（3） RI SI（3） JIANG H（2） KIM JC（2）

Topological kink states in graphene

NANOTECHNOLOGY

WANG ZB, CHENG SG, LIU X, JIANG H

Transport property of inhomogeneous strained graphene*

CHINESE PHYSICS B

WU BL, WEI Q, ZHANG ZQ, JIANG H

Rectification, transport properties of doped defective graphene nanoribbon junctions

NANOTECHNOLOGY

ZAMINPAYMA E, NAYEBI P, EMAMIRAZAVI M

Gate potential-controlled current switching in graphene Y-junctions

JOURNAL OF PHYSICSCONDENSED MATTER

ARAUJO FRV, DA COSTA DR, LIMA FN, NASCIMENTO ACS, PEREIRA JM

Enhanced transport properties of graphene oxide based cement composite material

JOURNAL OF BUILDING ENGINEERING

INDUKURI CSR, NERELLA R

Transport properties of B/P doped graphene nanoribbon field-effect transistor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

RUI CK, SHAO C, LIU JX, CHEN AQ, ZHU KG, SHAO QY

First-Principles Investigation of Pd-Doped Armchair Graphene Nanoribbons as a Potential Rectifier

JOURNAL OF ELECTRONIC MATERIALS

KHARWAR S, SINGH S, JAISWAL NK

Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge

NANOMATERIALS

PINTO N, MCNAUGHTON B, MINICUCCI M, MILOSEVIC MV, PERALI A

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H-SiC

CURRENT APPLIED PHYSICS

CIUK T, KASZUB W, KOSCIEWICZ K, DOBROWOLSKI A, JAGIELLO J, CHAMRYGA A, GACA J, WOJCIK M, CZOLAK D, STANCZYK B, PRZYBOROWSKA K, KOZLOWSKI R, KOZUBAL M, MICHALOWSKI PP, SZARY MJ, KAMINSKI P

Engineering of Numerous Moire Superlattices in Twisted Multilayer Graphene for Twistronics and Straintronics Applications

ACS NANO

BRZHEZINSKAYA M, KONONENKO O, MATVEEV V, ZOTOV A, KHODOS II, LEVASHOV V, VOLKOV V, BOZHKO SI, CHEKMAZOV SV, ROSHCHUPKIN D