国家/地区 India（3） China（2）
关键词 TRAP STATE（5）
出版物
出版时间
机构 INDIAN ASSOC.（2）
作者 BHATTACHARYA.（2） SAHA SK（2）

Graphene-Modified Tin Dioxide for Efficient Planar Perovskite Solar Cells with Enhanced Electron Extraction and Reduced Hysteresis

ACS APPLIED MATERIALS INTERFACES

ZHU MH, LIU WW, KE WJ, XIE LS, DONG P, HAO F

Facile synthesis and enhanced luminescence behavior of ZnO: Reduced graphene oxide(rGO) hybrid nanostructures

JOURNAL OF LUMINESCENCE

JAYALAKSHMI G, SARAVANAN K, PRADHAN J, MAGUDAPATHY P, PANIGRAHI BK

Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors

SMALL

MENG J, WU HC, CHEN JJ, LIN F, BIE YQ, SHVETS IV, YU DP, LIAO ZM

Origin of high storage capacity in N-doped graphene quantum dots

ELECTROCHIMICA ACTA

MIAH M, BHATTACHARYA S, GUPTA A, SAHA SK

Role of trap states on storage capacity in a graphene/MoO3 2D electrode material

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BHATTACHARYA S, DINDA D, SAHA SK