国家/地区 India（6）
关键词 TUNNEL FET（6）
出版物 SILICON（2）
出版时间 2021（2）
机构
作者 DUTTA R（3） PAITYA N（3） SUBASH TD（3）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

SILICON

DUTTA R, PAITYA N, SUBASH TD

Performance Evaluation of Bilayer Graphene Nanoribbon Tunnel FETs for Digital and Analog Applications

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RAWAT B, PAILY R

Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

LIANA Z, CHOUDHURI B, BHOWMICK B

Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon

JOURNAL OF ELECTRONIC MATERIALS

SAMUEL TSA, VENKATESH M, PANDIAN MK, VIMALA P

DC performance analysis of III-V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects

JOURNAL OF COMPUTATIONAL ELECTRONICS

DUTTA R, SUBASH TD, PAITYA N