国家/地区 Usa（5） China（4） France（2） Germany（2）
关键词 TUNNELLING（18）
出版物 PHYSICAL REVIEW B（8） APPLIED PHYSICS LET.（6） JOURNAL OF APPLIED .（2）
出版时间 2009（18）
机构 CHINESE ACAD.（2）
作者

Polarization-induced switching effect in graphene nanoribbon edge-defect junction

JOURNAL OF CHEMICAL PHYSICS

YIN G, LIANG YY, JIANG F, CHEN H, WANG P, NOTE R, MIZUSEKI H, KAWAZOE Y

Atomic and electronic structure of monolayer graphene on 6H-SiC(0001)(3x3): A scanning tunneling microscopy study

PHYSICAL REVIEW B

HIEBEL F, MALLET P, MAGAUD L, VEUILLEN JY

Quantum pumping in graphene

PHYSICAL REVIEW B

PRADA E, SANJOSE P, SCHOMERUS H

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

PHYSICAL REVIEW B

ZHENG XH, RUNGGER I, ZENG Z, SANVITO S

Noninvasive metal contacts in chemically derived graphene devices

APPLIED PHYSICS LETTERS

SUNDARAM RS, GOMEZNAVARRO C, LEE EJH, BURGHARD M, KERN K

A computational study of tunneling-percolation electrical transport in graphene-based nanocomposites

APPLIED PHYSICS LETTERS

HICKS J, BEHNAM A, URAL A

Controllable spin-dependent transport in armchair graphene nanoribbon structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, DO VN, BOURNEL A, NGUYEN VL, DOLLFUS P

Design of electron wave filters in monolayer graphene by tunable transmission gap

APPLIED PHYSICS LETTERS

CHEN X, TAO JW

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW