国家/地区 China（7）
关键词 VERTICAL STRAIN（7）
出版物
出版时间 2020（2） 2021（2） 2022（2）
机构 GUIZHOU UNIV.（2）
作者 DING Z（2） GUO X（2） LI LX（2） LIU XF（2）
LU XF（2） LUO ZJ（2） LV B（2） REN JQ（2）

Van der Waals heterostructure of graphene and As2S3: Tuning the Schottky barrier height by vertical strain

JOURNAL OF CRYSTAL GROWTH

LIU XF, LV B, DING Z, LUO ZJ

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

NANOMATERIALS

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Effects of vertical strain on zigzag graphene nanoribbon with a topological line defect

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

QU LH, ZHANG JM, XU KW, JI V

First-principles investigation on Schottky barrier modification of graphene/CdSe heterojunction by the interlayer distance

CHEMICAL PHYSICS

YIN JT, LI LX, GUO X, REN JQ, LU XF

Strain engineering on the electronic properties and interface contact of graphene/GeN3 van der Waals heterostructure

APPLIED SURFACE SCIENCE

SHU Y, HE KJ, XIONG R, CUI Z, YANG XH, XU C, ZHENG JY, WEN CL, WU B, SA BS

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

JOURNAL OF PHYSICS CHEMISTRY OF SOLIDS

ZHANG WJ, HAO GQ, ZHANG R, XU JH, YE XJ, LI HB

Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure

COMPUTATIONAL MATERIALS SCIENCE

LU XF, LI LX, GUO X, REN JQ, XUE HT, TANG FL