国家/地区
关键词 WIDE BAND GAP SEMICONDUCTOR（4）
出版物 APPLIED PHYSICS LET.（3）
出版时间 2010（4）
机构
作者

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

APPLIED PHYSICS LETTERS

KELLAR JA, ALABOSON JMP, WANG QH, HERSAM MC

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films

APPLIED PHYSICS LETTERS

KRUPKA J, STRUPINSKI W

Substrate doping effects on Raman spectrum of epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

YANG R, HUANG QS, CHEN XL, ZHANG GY, GAO HJ