国家/地区 Belgium（7）
关键词 GRAPHENE（2）
出版物 NANOSCALE（2）
出版时间 2013（2） 2015（2） 2020（2）
机构 IMEC（7）
作者 ASSELBERGHS I（7）

High speed graphene-silicon electro-absorption modulators for the O-band and C-band

JAPANESE JOURNAL OF APPLIED PHYSICS

ALESSANDRI C, ASSELBERGHS I, BREMS S, HUYGHEBAERT C, VAN CAMPENHOUT J, VAN THOURHOUT D, PANTOUVAKI M

5 x 25 Gbit/s WDM transmitters based on passivated graphene-silicon electro-absorption modulators

APPLIED OPTICS

ALESSANDRI C, ASSELBERGHS I, BREMS S, HUYGHEBAERT C, VAN CAMPENHOUT J, VAN THOURHOUT D, PANTOUVAKI M

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

NANOTECHNOLOGY

NOURBAKHSH A, AGARWAL TK, KLEKACHEV A, ASSELBERGHS I, CANTORO M, HUYGHEBAERT C, HEYNS M, VERHELST M, THEAN A, DE GENDT S

Graphene as anode electrode for colloidal quantum dots based light emitting diodes

APPLIED PHYSICS LETTERS

KLEKACHEV AV, KUZNETSOV SN, ASSELBERGHS I, CANTORO M, MUN JH, CHO BJ, STESMANS AL, HEYNS MM, DE GENDT S

Toward tunable doping in graphene FETs by molecular self-assembled monolayers

NANOSCALE

LI B, KLEKACHEV AV, CANTORO M, HUYGHEBAERT C, STESMANS A, ASSELBERGHS I, DE GENDT S, DE FEYTER S

Deducing the apparent flat-band position V-afb and the doping level of large area single layer graphene MOS capacitors

MICROELECTRONIC ENGINEERING

LIN HCD, ASSELBERGHS I, VAIS A, ARUTCHELVAN G, DELABIE A, HEYNS M, MOCUTA A, RADU I, THEAN A

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

NANOSCALE

NOURBAKHSH A, ADELMANN C, SONG Y, LEE CS, ASSELBERGHS I, HUYGHEBAERT C, BRIZZI S, TALLARIDA M, SCHMEISSER D, VAN ELSHOCHT S, HEYNS M, KONG J, PALACIOS T, DE GENDT S