国家/地区 Brazil（2）
关键词
出版物
出版时间 2010（2）
机构 UNIV FED MINAS GERAIS（2）
作者 LUCCHESE MM（2）

Raman study of ion-induced defects in N-layer graphene

JOURNAL OF PHYSICSCONDENSED MATTER

JORIO A, LUCCHESE MM, STAVALE F, FERREIRA EHM, MOUTINHO MVO, CAPAZ RB, ACHETE CA

Quantifying ion-induced defects and Raman relaxation length in graphene

CARBON

LUCCHESE MM, STAVALE F, FERREIRA EHM, VILANI C, MOUTINHO MVO, CAPAZ RB, ACHETE CA, JORIO A