国家/地区 China（23）
关键词 GRAPHENE（3） CHARGE OVERPOTENTIA.（2） LIO2 BATTERIE（2）
PECVD（2） PT NANOCATALYST（2） REDUCED GRAPHENE OX.（2）
THREEDIMENSIONAL GR.（2） ULTRAVIOLETASSISTED（2）
出版物 RSC ADVANCES（4） ACS APPLIED MATERIA.（3）
出版时间 2014（6） 2022（4） 2015（3） 2023（3） 2012（2） 2017（2） 2021（2）
机构 CHINESE ACAD.（11）
作者 CAO D（23）

Enhancement of Ni/NiO/graphitized carbon and beta-Cyclodextrin/reduced graphene oxide for the electrochemical detection of norfloxacin in water sample

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

CUI XQ, CAO D, DJELLABI R, QIAO M, WANG Y, ZHAO S, MAO R, GONG Y, ZHAO X, YANG B

Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene

MATERIALS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment

ACS APPLIED MATERIALS INTERFACES

ZHENG L, CHENG XH, CAO D, WANG G, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH, SHEN DS

All-fiber-optic temperature sensor based on reduced graphene oxide

LASER PHYSICS LETTERS

ZHANG J, LIAO GZ, JIN SS, CAO D, WEI QS, LU HH, YU JH, CAI X, TAN SZ, XIAO Y, TANG JY, LUO YH, CHEN Z

Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

APPLIED PHYSICS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XIA C, YU YH, SHEN DS

Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, ZHANG DL, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

JOURNAL OF INORGANIC MATERIALS

ZHANG YW, WAN L, CHENG XH, WANG ZJ, XIA C, CAO D, JIA TT, YU YH

Preparation of graphene-encapsulated magnetic microspheres for protein/peptide enrichment and MALDI-TOF MS analysis

CHEMICAL COMMUNICATIONS

LIU Q, SHI JB, CHENG MT, LI GL, CAO D, JIANG GB

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH