国家/地区 China（35）
关键词 GRAPHENE（14） FIELDEFFECT TRANSIS.（4） BILAYER GRAPHENE（2）
CHEMICAL VAPOR DEPO.（2） EPITAXIAL GRAPHENE（2） FREQUENCY（2）
GAIN（2） GROWTH（2） LOGIC GATE（2）
OXYGEN REDUCTION RE.（2） SUBSTRATE（2）
出版物 APPLIED PHYSICS LET.（5） ACTA PHYSICA SINICA（3） CARBON（3）
CHINESE PHYSICS LET.（3） IEEE ELECTRON DEVIC.（3） CHINESE PHYSICS B（2）
出版时间 2014（6） 2016（5） 2017（4） 2021（4） 2013（3） 2018（3） 2020（3） 2022（3）
机构 HEBEI SEMICO.（20） CHINESE ACAD.（3）
作者 LIU QB（35）

High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

CARBON

HE ZZ, YU C, LIU QB, SONG XB, GAO XD, GUO JC, ZHOU CJ, CAI SJ, FENG ZH

ORIENTATION CONTROL OF GRAPHENE IN WATERBORNE ANTICORROSIVE COATINGS

FRESENIUS ENVIRONMENTAL BULLETIN

LI ZL, LIU QB, TIAN WM, ZHANG TH

Fast growth of single-crystal graphene on Cu-Ni substrate by surface oxygen supply

DIAMOND RELATED MATERIALS

GAO XD, YU C, HE ZZ, LIU QB, GUO JC, ZHOU CJ, GUO HY, CAI SJ, FENG ZH

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

NANOSCALE ADVANCES

GAO XD, YU C, HE ZZ, SONG XB, LIU QB, ZHOU CJ, GUO JC, CAI SJ, FENG ZH

A Graphene-Based Terahertz Hot Electron Bolometer with Johnson Noise Readout

JOURNAL OF LOW TEMPERATURE PHYSICS

MIAO W, GAO H, WANG Z, ZHANG W, REN Y, ZHOU KM, SHI SC, YU C, HE ZZ, LIU QB, FENG ZH

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH