国家/地区 China（5）
关键词
出版物 APPLIED PHYSICS LET.（2） NANOSCALE（2）
出版时间 2013（3） 2014（2）
机构 TSINGHUA UNIV（5）
作者 LV HM（5）

Inverted process for graphene integrated circuits fabrication

NANOSCALE

LV HM, WU HQ, LIU JB, HUANG C, LI JF, YU JH, NIU JB, XU QX, YU ZP, QIAN H

Graphene nonvolatile memory prototype based on charge-transfer mechanism

APPLIED PHYSICS EXPRESS

LV HM, WU HQ, HUANG C, WANG YD, QIAN H

High carrier mobility in suspended-channel graphene field effect transistors

APPLIED PHYSICS LETTERS

LV HM, WU HQ, LIU JB, YU JH, NIU JB, LI JF, XU QX, WU XM, QIAN H

Graphene mobility enhancement by organosilane interface engineering

APPLIED PHYSICS LETTERS

LV HM, WU HQ, XIAO K, ZHU WN, XU HL, ZHANG ZY, QIAN H

The study of the effects of cooling conditions on high quality graphene growth by the APCVD method

NANOSCALE

XIAO K, WU HQ, LV HM, WU XM, QIAN H