国家/地区 China（12）
关键词 FINITESIZE EFFECT（3） GRAPHENE ELECTRONIC（3） TUNNELING（3）
GRAPHENE（2）
出版物 APPLIED PHYSICS AMA.（2） CARBON（2） IEEE ELECTRON DEVIC.（2）
出版时间 2010（2） 2015（2）
机构 SOOCHOW UNIV（7） UNIV SCI TE.（4）
作者 MAO LF（12）

Thermionic emission current in graphene-based electronic devices

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

MAO LF

Quantum capacitance of the armchair-edge graphene nanoribbon

PRAMANAJOURNAL OF PHYSICS

MAO LF

Current-voltage Characteristics of Graphene Nanoribbon Schottky Diodes

IETE JOURNAL OF RESEARCH

MAO LF, WANG ZO, ZHANG LJ, JI AM, ZHU CY, YANG JF

A theoretical analysis of field emission from graphene nanoribbons

CARBON

MAO LF

Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts

IEEE ELECTRON DEVICE LETTERS

MAO LF, LI XJ, ZHU CY, WANG ZO, LU ZH, YANG JF, ZHU HW, LIU YS, WANG JY

Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistors

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

MAO LF

Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors

NANOTECHNOLOGY

MAO LF

The gate leakage current in graphene field-effect transistor

IEEE ELECTRON DEVICE LETTERS

MAO LF, LI XJ, WANG ZO, WANG JY

Modeling of spectral shift in Raman spectroscopy, photo- and electro-luminescence induced by electric field tuning of graphene related electronic devices

CARBON

MAO LF, WANG J, LI L, NING H, HU CJ

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

SCIENTIFIC REPORTS

MAO LF, NING HS, HUO ZL, WANG JY