国家/地区 China（8）
关键词 GRAPHENE（2）
出版物 RSC ADVANCES（3）
出版时间 2014（5） 2015（3）
机构 CHINESE ACAD SCI（8）
作者 XIA C（8）

Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene

MATERIALS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment

ACS APPLIED MATERIALS INTERFACES

ZHENG L, CHENG XH, CAO D, WANG G, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH, SHEN DS

Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition

APPLIED PHYSICS LETTERS

ZHENG L, CHENG XH, CAO D, WANG ZJ, XIA C, YU YH, SHEN DS

Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, ZHANG DL, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

ZHENG L, CHENG XH, CAO D, WANG ZJ, XU DW, XIA C, SHEN LY, YU YH

Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism

JOURNAL OF PHYSICAL CHEMISTRY C

ZHENG L, CHENG XH, WANG ZJ, XIA C, CAO D, SHEN LY, WANG Q, YU YH, SHEN DS

Passivation effect of graphene on AlGaN/GaN Schottky diode

RSC ADVANCES

SHEN LY, CHENG XH, WANG ZJ, XIA C, CAO D, ZHENG L, WANG Q, YU YH

Direct growth of Sb2Te3 on graphene by atomic layer deposition

RSC ADVANCES

ZHENG L, CHENG XH, CAO D, WANG Q, WANG ZJ, XIA C, SHEN LY, YU YH, SHEN DS