国家/地区 China（16）
关键词 EXTERNAL ELECTRIC FIELD（16）
出版物 ACTA PHYSICA SINICA（2） APPLIED SURFACE SCI.（2） NANOSCALE RESEARCH .（2）
出版时间 2022（6） 2019（3） 2021（2）
机构 HENAN NORMAL.（2）
作者 HU WY（3） HUANG GF（3） HUANG T（3） HUANG WQ（3）
LIU XF（2） LUO ZJ（2） LV B（2） WU SY（2）
YANG MY（2） ZHOU X（2）

The external electric-field-induced Schottky-to-ohmic contact transition in graphene/As2S3 interface: A study by the first principles

INTERNATIONAL JOURNAL OF ENERGY RESEARCH

LIU XF, ZHANG ZC, LV B, DING Z, LUO ZJ

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe(2)van der Waals Heterostructure

NANOSCALE RESEARCH LETTERS

LAN Y, XIA LX, HUANG T, XU WP, HUANG GF, HU WY, HUANG WQ

Tunable Schottky barrier in van der Waals heterostructures of graphene and hydrogenated phosphorus carbide monolayer: first-principles calculations

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HUANG T, CHEN Q, CHENG MQ, HUANG WQ, HU WY, HUANG GF

Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field

NANOSCALE RESEARCH LETTERS

GUO JJ, ZHOU ZP, LI HH, WANG HY, LIU C

Graphene/g-GeC bilayer heterostructure: Modulated electronic properties and interface contact via external vertical strains and electric fileds

CARBON

GAO X, SHEN YQ, MA YY, WU SY, ZHOU ZX

Graphene/blue-phosphorus heterostructure as potential anode materials for sodium-ion batteries

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

FAN KM, TANG T, WU SY, ZHANG ZY

Tunable Schottky contacts in the antimonene/graphene van der Waals heterostructures

SOLID STATE COMMUNICATIONS

LI W, WANG XL, DAI XQ

Tuning the Nanofriction Between Two Graphene Layers by External Electric Fields: A Density Functional Theory Study

TRIBOLOGY LETTERS

WANG JJ, LI JM, LI C, CAI XL, ZHU WG, JIA Y

Theoretical studies on optical absorption in twisted bilayer graphene under vertical electric field

ACTA PHYSICA SINICA

ZHOU C, GONG R, FENG XB

Electronic structure of graphene nanoribbons under external electric field by density functional tight binding

ACTA PHYSICA SINICA

YANG C, JING L, LIN Z