国家/地区 China（5）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2016（5）
机构
作者

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

ACS APPLIED MATERIALS INTERFACES

WU Y, ZOU XM, SUN ML, CAO ZY, WANG XR, HUO S, ZHOU JJ, YANG Y, YU XX, KONG YC, YU GH, LIAO L, CHEN TS

Improve the transconductance of a graphene field-effect transistor by folding graphene into a wedge

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CAO GM, LIU WH, CAO M, LI X, ZHANG AP, WANG XL, CHEN BD

A Pure Frequency Tripler Based on CVD Graphene

IEEE ELECTRON DEVICE LETTERS

CHENG CT, HUANG BJ, LIU JL, ZHANG ZY, MAO XR, XUE P, CHEN HD

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Emission-Tunable Multicolor Graphene Molecules with Controllable Synthesis, Excellent Optical Properties, and Specific Applications

ACS APPLIED MATERIALS INTERFACES

YANG JW, HUANG YL, ZHU HY, HUANG W, WANG WZ