国家/地区 China（6）
关键词 SIC SUBSTRATE（6）
出版物 CHINESE PHYSICS B（3）
出版时间
机构
作者 WANG DC（2） ZHANG YM（2）

Synthesis of graphene-like carbon film on SiC substrate

JOURNAL OF CRYSTAL GROWTH

WANG Y, GU PF, ZHAO ZF, ZHOU P, LI ZH, LI Y

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substratesl

CHINESE PHYSICS B

WANG DC, ZHANG YM

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

CHINESE PHYSICS B

CHEN LL, GUO LW, LIU Y, LI ZL, HUANG J, LU W

Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition

CHINESE PHYSICS B

WANG DC, ZHANG YM, ZHANG YM, LEI TM, GUO H, WANG YH, TANG XY, WANG H

Regulating the Electronic Structure of Freestanding Graphene on SiC by Ge/Sn Intercalation: A Theoretical Study

MOLECULES

LUO XY, LIANG GJ, LI YL, YU FP, ZHAO X