国家/地区 China（3）
关键词 TRANSISTOR（2）
出版物
出版时间 2022（3）
机构
作者 WEN DZ（3）

Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots

NANOMATERIALS

WANG L, ZHANG YK, ZHANG P, WEN DZ

Graphene film transistors based on asymmetric gate design combining with chemical doping

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

SUN YM, HE NA, WEN DZ

Gate controlled resistive switching behavior of heterostructure in the Ni-Co layered double hydroxide/graphene oxide transistor

APPLIED SURFACE SCIENCE

YUAN Q, HE N, WANG YF, SUN YM, WEN DZ