国家/地区 China（3）
关键词 GRAPHENE（3）
出版物
出版时间
机构 HEBEI SEMICOND RES INST（3）
作者 CAI SJ（3）

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

SOLID STATE COMMUNICATIONS

YU C, LI J, GAO KH, LIN T, LIU QB, DUN SB, HE ZZ, CAI SJ, FENG ZH

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ