国家/地区 China（10）
关键词 BILAYER GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（2） CARBON（2） CHINESE PHYSICS LET.（2）
IEEE ELECTRON DEVIC.（2）
出版时间 2016（3） 2014（2） 2017（2）
机构 HEBEI SEMICOND RES INST（10）
作者 SONG XB（10）

High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

CARBON

HE ZZ, YU C, LIU QB, SONG XB, GAO XD, GUO JC, ZHOU CJ, CAI SJ, FENG ZH

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

NANOSCALE ADVANCES

GAO XD, YU C, HE ZZ, SONG XB, LIU QB, ZHOU CJ, GUO JC, CAI SJ, FENG ZH

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

YU C, HE ZZ, SONG XB, LIU QB, GAO LB, YAO B, HAN TT, GAO XD, LV YJ, FENG ZH, CAI SJ

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

CHINESE PHYSICS LETTERS

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, SONG XB, HAN TT, FENG ZH, CAI SJ

Graphene Amplifier MMIC on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, LIU QB, SONG XB, XU P, HAN TT, LI J, FENG ZH, CAI SJ

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, LI J, SONG XB, LIU QB, CAI SJ, FENG ZH