国家/地区 China（6）
关键词
出版物
出版时间 2017（2） 2020（2）
机构 HEBEI SEMICOND RES INST（6）
作者 ZHOU CJ（6）

High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

CARBON

HE ZZ, YU C, LIU QB, SONG XB, GAO XD, GUO JC, ZHOU CJ, CAI SJ, FENG ZH

Fast growth of single-crystal graphene on Cu-Ni substrate by surface oxygen supply

DIAMOND RELATED MATERIALS

GAO XD, YU C, HE ZZ, LIU QB, GUO JC, ZHOU CJ, GUO HY, CAI SJ, FENG ZH

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

NANOSCALE ADVANCES

GAO XD, YU C, HE ZZ, SONG XB, LIU QB, ZHOU CJ, GUO JC, CAI SJ, FENG ZH

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0001) substrate

APPLIED SURFACE SCIENCE

LIU QB, YU C, HE ZZ, GU GD, WANG JJ, ZHOU CJ, GUO JC, GAO XD, FENG ZH

Improvement of the Frequency Characteristics of Graphene Field-Effect Transistors on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, SONG XB, LIU QB, HAN TT, DUN SB, WANG JJ, ZHOU CJ, GUO JC, LV YJ, FENG ZH, CAI SJ

High-frequency noise characterization of graphene field effect transistors on SiC substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH