国家/地区 China（3）
关键词 FIELDEFFECT TRANSISTOR（3）
出版物 ADVANCED ELECTRONIC MATERIALS（3）
出版时间 2020（2）
机构
作者

Graphene Field-Effect Transistors on Hexagonal-Boron Nitride for Enhanced Interfacial Thermal Dissipation

ADVANCED ELECTRONIC MATERIALS

LIU DH, CHEN XS, ZHANG Y, WANG DG, ZHAO Y, PENG HS, LIU YQ, XU XF, WEE ATS, WEI DC

Transconductance Amplification in Dirac-Source Field-Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

ADVANCED ELECTRONIC MATERIALS

XU L, QIU CG, PENG LM, ZHANG ZY

High-Performance Monolayer SiMe-Graphene n-Type Field-Effect Transistors with Low Supply Voltage and High On-State Current in Sub-5 nm Gate Length

ADVANCED ELECTRONIC MATERIALS

ZHAO WK, ZOU DQ, SUN ZP, XU YQ, JI GM, LI XT, YANG CL