国家/地区 Germany（6）
关键词
出版物 PHYSICAL REVIEW LET.（3） PHYSICAL REVIEW B（2）
出版时间 2016（2）
机构 FORSCHUNGSZE.（5）
作者 BOCQUET FC（6）

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

PHYSICAL REVIEW LETTERS

BOCQUET FC, LIN YR, FRANKE M, SAMISERESHT N, PARHIZKAR S, SOUBATCH S, LEE TL, KUMPF C, TAUTZ FS

Deuterium adsorption on (and desorption from) SiC(0001)-(3 x 3), (root 3 x root 3) R30 degrees, (6 root 3 x 6 root 3) R30 degrees and quasi-free-standing graphene obtained by hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BOCQUET FC, BISSON R, THEMLIN JM, LAYET JM, ANGOT T

Structural and Electronic Properties of Nitrogen-Doped Graphene

PHYSICAL REVIEW LETTERS

SFORZINI J, HAPALA P, FRANKE M, VAN STRAATEN G, STOHR A, LINK S, SOUBATCH S, JELINEK P, LEE TL, STARKE U, SVEC M, BOCQUET FC, TAUTZ FS

Transformation of metallic boron into substitutional dopants in graphene on 6H-SiC(0001)

PHYSICAL REVIEW B

SFORZINI J, TELYCHKO M, KREJCI O, VONDRACEK M, SVEC M, BOCQUET FC, TAUTZ FS

Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001)

PHYSICAL REVIEW LETTERS

SFORZINI J, NEMEC L, DENIG T, STADTMULLER B, LEE TL, KUMPF C, SOUBATCH S, STARKE U, RINKE P, BLUM V, BOCQUET FC, TAUTZ FS

Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)

PHYSICAL REVIEW B

LIN YR, WOLFF S, SCHADLICH P, HUTTER M, SOUBATCH S, LEE TL, TAUTZ FS, SEYLLER T, KUMPF C, BOCQUET FC