国家/地区 Germany（8）
关键词 GRAPHENE（5） CHEMICAL VAPOR DEPO.（2） CONTACT RESISTANCE（2）
INTRINSIC VOLTAGE G.（2） MOBILITY（2） SCHOTTKY DIODE（2）
出版物
出版时间 2020（4） 2017（2）
机构 RHEIN WESTFAL TH AACHEN（8）
作者 KATARIA S（8）

Dependable Contact Related Parameter Extraction in Graphene-Metal Junctions

ADVANCED ELECTRONIC MATERIALS

GAHOI A, KATARIA S, DRIUSSI F, VENICA S, PANDEY H, ESSENI D, SELMI L, LEMME MC

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

ACS APPLIED ELECTRONIC MATERIALS

WITTMANN S, AUMER F, WITTMANN D, PINDL S, WAGNER S, GAHOI A, REATO E, BELETE M, KATARIA S, LEMME MC

Capacitance-Voltage (C-V ) Characterization of Graphene-Silicon Heterojunction Photodiodes

ADVANCED OPTICAL MATERIALS

RIAZIMEHR S, BELETE M, KATARIA S, ENGSTROM O, LEMME MC

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

ACS APPLIED MATERIALS INTERFACES

BELETE M, ENGSTROM O, VAZIRI S, LIPPERT G, LUKOSIUS M, KATARIA S, LEMME MC

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

ACS PHOTONICS

RIAZIMEHR S, KATARIA S, GONZALEZMEDINA JM, WAGNER S, SHAYGAN M, SUCKOW S, RUIZ FG, ENGSTROM O, GODOY A, LEMME MC

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC

High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs

IEEE ELECTRON DEVICE LETTERS

PANDEY H, KATARIA S, GAHOI A, LEMME MC

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

ANNALEN DER PHYSIK

PANDEY H, AGUIRREMORALES JD, KATARIA S, FREGONESE S, PASSI V, IANNAZZO M, ZIMMER T, ALARCON E, LEMME MC