国家/地区 Germany（4）
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机构 IHP（4）
作者 MAI A（4）

Processing and integration of graphene in a 200 mm wafer Si technology environment

MICROELECTRONIC ENGINEERING

LISKER M, LUKOSIUS M, FRASCHKE M, KITZMANN J, DABROWSKI J, FURSENKO O, KULSE P, SCHULZ K, KRUGER A, DREWS J, SCHULZE S, WOLANSKY D, SCHUBERT AM, KATZER J, STOLAREK D, COSTINA I, WOLFF A, DZIALLAS G, COCCETTI F, MAI A

Contacting graphene in a 200 mm wafer silicon technology environment

SOLIDSTATE ELECTRONICS

LISKER M, LUKOSIUS M, KITZMANN J, FRASCHKE M, WOLANSKY D, SCHULZE S, LUPINA G, MAI A

Graphene Synthesis and Processing on Ge Substrates

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

LUPINA G, LUKOSIUS M, LIPPERT G, DABROWSKI J, KITZMANN J, LISKER M, KULSE P, KRUGER A, FURSENKO O, COSTINA I, TRUSCH A, YAMAMOTO Y, WOLFF A, SCHROEDER T, MAI A

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

ACS APPLIED MATERIALS INTERFACES

LUKOSIUS M, DABROWSKI J, KITZMANN J, FURSENKO O, AKHTAR F, LISKER M, LIPPERT G, SCHULZE S, YAMAMOTO Y, SCHUBERT MA, KRAUSE HM, WOLFF A, MAI A, SCHROEDER T, LUPINA G