国家/地区 Germany（8）
关键词 GRAPHENE（6） CONTACT RESISTANCE（2） PROCESS INTEGRATION（2）
TRANSISTOR（2）
出版物 SOLIDSTATE ELECTRONICS（8）
出版时间 2013（2） 2016（2） 2018（2）
机构 UNIV SIEGEN（4）
作者 LEMME MC（5） BABLICH A（2） KATARIA S（2） LUPINA G（2）
OSTLING M（2） PASSI V（2） SMITH AD（2） VAZIRI S（2）

Contacting graphene in a 200 mm wafer silicon technology environment

SOLIDSTATE ELECTRONICS

LISKER M, LUKOSIUS M, KITZMANN J, FRASCHKE M, WOLANSKY D, SCHULZE S, LUPINA G, MAI A

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

SOLIDSTATE ELECTRONICS

HEIDLER J, YANG S, FENG XL, MULLEN K, ASADI K

A manufacturable process integration approach for graphene devices

SOLIDSTATE ELECTRONICS

VAZIRI S, LUPINA G, PAUSSA A, SMITH AD, HENKEL C, LIPPERT G, DABROWSKI J, MEHR W, OSTLING M, LEMME MC

Transfer-free grown bilayer graphene transistors for digital applications

SOLIDSTATE ELECTRONICS

WESSELY PJ, WESSELY F, BIRINCI E, RIEDINGER B, SCHWALKE U

Mobility in graphene double gate field effect transistors

SOLIDSTATE ELECTRONICS

LEMME MC, ECHTERMEYER TJ, BAUS M, SZAFRANEK BN, BOLTEN J, SCHMIDT M, WAHLBRINK T, KURZ H

Contact resistance study of various metal electrodes with CVD graphene

SOLIDSTATE ELECTRONICS

GAHOI A, WAGNER S, BABLICH A, KATARIA S, PASSI V, LEMME MC

Spectral sensitivity of graphene/silicon heterojunction photodetectors

SOLIDSTATE ELECTRONICS

RIAZIMEHR S, BABLICH A, SCHNEIDER D, KATARIA S, PASSI V, YIM C, DUESBERG GS, LEMME MC

Large scale integration of graphene transistors for potential applications in the back end of the line

SOLIDSTATE ELECTRONICS

SMITH AD, VAZIRI S, RODRIGUEZ S, OSTLING M, LEMME MC