国家/地区 India（2）
关键词 MODEL（2）
出版物
出版时间
机构
作者 BARDHAN S（2）

A Surface Potential-Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects

JOURNAL OF CIRCUITS SYSTEMS COMPUTERS

BARDHAN S, SAHOO M, RAHAMAN H

Empirical Drain Current Model of Graphene Field-Effect Transistor for Application as a Circuit Simulation Tool

IETE JOURNAL OF RESEARCH

BARDHAN S, SAHOO M, RAHAMAN H