国家/地区 India（3）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（2）
机构 INDIAN INST .（3）
作者 KHARE M（3）

Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

IEEE ELECTRON DEVICE LETTERS

MISHRA A, JANARDANAN A, KHARE M, KALITA H, KOTTANTHARAYIL A

Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications (vol 100, 233506, 2012)

APPLIED PHYSICS LETTERS

MISRA A, WAIKAR M, GOUR A, KALITA H, KHARE M, ASLAM M, KOTTANTHARAYIL A

Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

APPLIED PHYSICS LETTERS

MISRA A, WAIKAR M, GOUR A, KALITA H, KHARE M, ASLAM M, KOTTANTHARAYIL A