国家/地区 India（9）
关键词 NEGF（9）
出版物
出版时间 2016（2） 2018（2） 2021（2）
机构 INDIAN INST .（3）
作者 PAILY R（3） RAWAT B（3） PALLA P（2） TIWARI DL（2）

Nitrogen-doped NDR behavior of double gate graphene field effect transistor

SUPERLATTICES MICROSTRUCTURES

TIWARI DL, SIVASANKARAN K

Effect of Hexagonal Boron Nitride on Electron-Hole Puddles of Graphene Nanomesh Field Effect Transistor

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

PALLA P, ANSARI HR, TIWARI DL

Modeling of graphene-based field-effect transistors through a 1-D real-space approach

JOURNAL OF COMPUTATIONAL ELECTRONICS

RAWAT B, PAILY R

Performance Evaluation of Bilayer Graphene Nanoribbon Tunnel FETs for Digital and Analog Applications

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RAWAT B, PAILY R

Performance projection bilayer graphene nanoribbon FET through quantum mechanical simulation

SEMICONDUCTOR SCIENCE TECHNOLOGY

RAWAT B, PAILY R

Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

BULLETIN OF MATERIALS SCIENCE

PALLA P, UPPU GR, ETHIRAJ AS, RAINA JP

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

G-C4N3-graphene-g-C4N3: A useful spin thermoelectric material

JOURNAL OF PHYSICS CHEMISTRY OF SOLIDS

BHOWMICK R, KOLEY S, CHATTOPADHYAYA M, SEN S

Cu decorated functionalized graphene for Arsenic sensing in water: A first principles analysis

APPLIED SURFACE SCIENCE

SRIVASTAVA M, SRIVASTAVA A