国家/地区 India（3）
关键词 MOBILITY（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间
机构
作者

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

Flexibility of Key Electronic and Optical Properties of Reduced Graphene Oxide Through Its Controlled Synthesis

IEEE TRANSACTIONS ON ELECTRON DEVICES

NARZARY R, PHUKAN P, DAS S, SAHU PP