国家/地区 Iran（8）
关键词 GRAPHENE（2） PLASMONIC（2） TUNNELING TRANSISTO.（2）
出版物 JOURNAL OF APPLIED .（2）
出版时间 2017（3） 2019（2） 2020（2）
机构 ISLAMIC AZAD.（3） SHARIF UNIV .（2）
作者 HORRI A（8）

Tight-binding description of graphene-BCN-graphene layered semiconductors

JOURNAL OF COMPUTATIONAL ELECTRONICS

EBRAHIMI M, HORRI A, SANAEEPUR M, TAVAKOLI MB

A comparative computational study of tunneling transistors based on vertical graphene-hBCN heterostructures

JOURNAL OF APPLIED PHYSICS

EBRAHIMI M, HORRI A, SANAEEPUR M, TAVAKOLI MB

Full-Quantum Simulation of Graphene Self-Switching Diodes

CHINESE PHYSICS LETTERS

HORRI A, FAEZ R

Design of graphene-based hybrid waveguides for nonlinear applications

OPTICAL QUANTUM ELECTRONICS

SADAGHIANI VK, ZAVVARI M, TAVAKKOLI MB, HORRI A

Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

HORRI A, FAEZ R, DARVISH G

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

JOURNAL OF APPLIED PHYSICS

HORRI A, FAEZ R, POURFATH M, DARVISH G

Second harmonic generation in a graphene-based plasmonic waveguide

PHOTONIC NETWORK COMMUNICATIONS

SADAGHIANI VK, TAVAKOLI MB, HORRI A