国家/地区 Iran（9）
关键词 BORON NITRIDE（2） NEGF（2） NONEQUILIBRIUM GREE.（2）
RESONANT TUNNELING .（2）
出版物 BEILSTEIN JOURNAL O.（2） IEEE TRANSACTIONS O.（2） JOURNAL OF COMPUTAT.（2）
SUPERLATTICES MICRO.（2）
出版时间 2020（5） 2014（2）
机构 ARAK UNIV（5） SHAHID BEHES.（2）
作者 SANAEEPUR M（9）

y Negative differential resistance in nanoscale heterostructures based on zigzag graphene nanoribbons anti-symmetrically decorated with BN

SUPERLATTICES MICROSTRUCTURES

ESMAEILI M, JAFARI MR, SANAEEPUR M

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

SANAEEPUR M

Tight-binding description of graphene-BCN-graphene layered semiconductors

JOURNAL OF COMPUTATIONAL ELECTRONICS

EBRAHIMI M, HORRI A, SANAEEPUR M, TAVAKOLI MB

A comparative computational study of tunneling transistors based on vertical graphene-hBCN heterostructures

JOURNAL OF APPLIED PHYSICS

EBRAHIMI M, HORRI A, SANAEEPUR M, TAVAKOLI MB

Ultrascaled Resonant Tunneling Diodes Based on BN Decorated Zigzag Graphene Nanoribbon Lateral Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

SANAEEPUR M, JAFARI MR, ESMAEILI M

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nano-ribbon field effect transistors symmetrically doped with BN

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

SANAEEPUR M, GOHARRIZI AY, SHARIFI MJ

Performance Analysis of Graphene Nanoribbon Field Effect Transistors in the Presence of Surface Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

SANAEEPUR M, GOHARRIZI AY, SHARIFI MJ

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

SUPERLATTICES MICROSTRUCTURES

GOHARRIZI AY, SANAEEPUR M, SHARIFI MJ

Power-delay-product optimal repeater design for horizontal and vertical multilayer graphene nanoribbon interconnects

JOURNAL OF COMPUTATIONAL ELECTRONICS

SANAEEPUR M, MOMENI M, MAHMOUDI A