国家/地区 Italy（4）
关键词 SIMULATION（4）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2015（2）
机构 UNIV BOLOGNA（4）
作者 GNANI E（4）

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

SOLIDSTATE ELECTRONICS

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Simulations of Graphene Base Transistors With Improved Graphene Interface Model

IEEE ELECTRON DEVICE LETTERS

DI LECCE V, GNUDI A, GNANI E, REGGIANI S, BACCARANI G