国家/地区 Japan（17）
关键词 GRAPHENE（4）
出版物 PHYSICAL REVIEW B（3） APPLIED PHYSICS LET.（2） CHEMICAL PHYSICS LE.（2）
出版时间 2014（4） 2010（3） 2015（2） 2016（2）
机构 NAGOYA UNIV（17）
作者 KUSUNOKI M（17）

Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a B4C thin film

NANOTECHNOLOGY

NORIMATSU W, MATSUDA K, TERASAWA TO, TAKATA N, MASUMORI A, ITO K, ODA K, ITO T, ENDO A, FUNAHASHI R, KUSUNOKI M

Acceleration of Photocarrier Relaxation in Graphene Achieved by Epitaxial Growth: Ultrafast Photoluminescence Decay of Monolayer Graphene on SiC

JOURNAL OF PHYSICAL CHEMISTRY C

IMAEDA H, KOYAMA T, KISHIDA H, KAWAHARA K, AGO H, SAKAKIBARA R, NORIMATSU W, TERASAWA T, BAO JF, KUSUNOKI M

Growth of graphene from SiC{0001} surfaces and its mechanisms

SEMICONDUCTOR SCIENCE TECHNOLOGY

NORIMATSU W, KUSUNOKI M

Growth mechanisms and selectivity for graphene or carbon nanotube formation on SiC (000(1)over-bar): A density-functional tight-binding molecular dynamics study

CHEMICAL PHYSICS LETTERS

OGASAWARA N, NORIMATSU W, IRLE S, KUSUNOKI M

Structural features of epitaxial graphene on SiC {0001} surfaces

JOURNAL OF PHYSICS DAPPLIED PHYSICS

NORIMATSU W, KUSUNOKI M

Epitaxial graphene on SiC{0001}: advances and perspectives

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

NORIMATSU W, KUSUNOKI M

Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): Impact of the substrate steps

APPLIED PHYSICS LETTERS

MORITA M, NORIMATSU W, QIAN HJ, IRLE S, KUSUNOKI M

Epitaxial growth of boron-doped graphene by thermal decomposition of B4C

JOURNAL OF PHYSICSCONDENSED MATTER

NORIMATSU W, HIRATA K, YAMAMOTO Y, ARAI S, KUSUNOKI M

Formation mechanism of graphene layers on SiC (000(1)over-bar) in a high-pressure argon atmosphere

PHYSICAL REVIEW B

NORIMATSU W, TAKADA J, KUSUNOKI M

Transmission Electron Microscope Observation of Interface Structures of Graphene on 6H-SiC

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

NORIMATSU W, KUSUNOKI M