国家/地区 Japan（15）
关键词 GRAPHENE（5） QUANTUM DOT（2）
出版物 APPLIED PHYSICS LET.（4） APPLIED PHYSICS EXP.（2）
出版时间 2020（3） 2009（2） 2011（2）
机构 NATL INST MA.（8） NIMS（3）
作者 WATANABE E（15）

Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

APPLIED PHYSICS LETTERS

SEO Y, MASUBUCHI S, WATANABE E, ONODERA M, MORIYA R, WATANABE K, TANIGUCHI T, MACHIDA T

Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices

APPLIED PHYSICS EXPRESS

IWASAKI T, MORITA Y, NAKAHARAI S, WAKAYAMA Y, WATANABE E, TSUYA D, WATANABE K, TANIGUCHI T, MORIYAMA S

Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

ACS APPLIED MATERIALS INTERFACES

IWASAKI T, ENDO K, WATANABE E, TSUYA D, MORITA Y, NAKAHARAI S, NOGUCHI Y, WAKAYAMA Y, WATANABE K, TANIGUCHI T, MORIYAMA S

Topological valley currents in bilayer graphene/hexagonal boron nitride superlattices

APPLIED PHYSICS LETTERS

ENDO K, KOMATSU K, IWASAKI T, WATANABE E, TSUYA D, WATANABE K, TANIGUCHI T, NOGUCHI Y, WAKAYAMA Y, MORITA Y, MORIYAMA S

Observation of the quantum valley Hall state in ballistic graphene superlattices

SCIENCE ADVANCES

KOMATSU K, MORITA Y, WATANABE E, TSUYA D, WATANABE K, TANIGUCHI T, MORIYAMA S

Field-induced confined states in graphene

APPLIED PHYSICS LETTERS

MORIYAMA S, MORITA Y, WATANABE E, TSUYA D

Coulomb blockade behavior in nanostructured graphene with direct contacts

MATERIALS EXPRESS

MORIYAMA S, MORITA Y, WATANABE E, TSUYA D

Low contact resistance metals for graphene based devices

DIAMOND RELATED MATERIALS

WATANABE E, CONWILL A, TSUYA D, KOIDE Y

Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars

APPLIED PHYSICS EXPRESS

TOMORI H, KANDA A, GOTO H, OOTUKA Y, TSUKAGOSHI K, MORIYAMA S, WATANABE E, TSUYA D

Production of Extended Single-Layer Graphene

ACS NANO

XU MS, FUJITA D, SAGISAKA K, WATANABE E, HANAGATA N