国家/地区 Japan（9）
关键词 NANOMATERIAL（3） LOW DIMENSIONAL STR.（2） SOLID PHASE EPITAXY（2）
出版物 JOURNAL OF CRYSTAL .（4） JAPANESE JOURNAL OF.（3）
出版时间 2019（3） 2020（2）
机构 MEIJO UNIV（9）
作者 NARITSUKA S（9）

X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

JOURNAL OF CRYSTAL GROWTH

NARITSUKA S, YAMADA J, UEDA Y, NAKASHIMA A, KASHIO T, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M

Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer

JOURNAL OF CRYSTAL GROWTH

YAMADA J, UEDA Y, MARUYAMA T, NARITSUKA S

Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD

APPLIED PHYSICS LETTERS

UEDA Y, YAMADA J, ONO T, MARUYAMA T, NARITSUKA S

Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

JAPANESE JOURNAL OF APPLIED PHYSICS

YAMADA J, USAMI S, UEDA Y, HONDA Y, AMANO H, MARUYAMA T, NARITSUKA S

Effect of growth pressure on graphene direct growth on r-plane and c-plane sapphires by low-pressure CVD

JAPANESE JOURNAL OF APPLIED PHYSICS

UEDA Y, YAMANDA J, FUJIWARA K, YAMAMOTO D, MARUYAMA T, NARITSUKA S

Selective growth of (001) GaAs using a patterned graphene mask

JOURNAL OF CRYSTAL GROWTH

HIROTA Y, SHIRAI Y, IHA H, KITO Y, SUZUKI M, KATO H, YAMAMOTO N, MARUYAMA T, NARITSUKA S

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

JOURNAL OF CRYSTAL GROWTH

MARUYAMA T, YAMASHITA Y, SAIDA T, TANAKA SI, NARITSUKA S

Direct growth of multilayer graphene by precipitation using W capping layer

JAPANESE JOURNAL OF APPLIED PHYSICS

YAMADA J, UEDA Y, MARUYAMA T, NARITSUKA S

In Situ High-Temperature NEXAFS Study on Carbon Nanotube and Graphene Formation by Thermal Decomposition of SiC

JOURNAL OF PHYSICAL CHEMISTRY C

MARUYAMA T, NARITSUKA S, AMEMIYA K