国家/地区 Japan（17）
关键词 GRAPHENE（7） FET（4） CONTACT RESISTANCE（2）
SILICON（2）
出版物 JAPANESE JOURNAL OF.（9） SOLIDSTATE ELECTRON.（3） PROCEEDINGS OF THE .（2）
出版时间 2010（5） 2011（4） 2016（3） 2013（2）
机构 TOHOKU UNIV（17）
作者 SUEMITSU T（17）

Site-Selective Epitaxy of Graphene on Si Wafers

PROCEEDINGS OF THE IEEE

FUKIDOME H, KAWAI Y, HANDA H, HIBINO H, MIYASHITA H, KOTSUGI M, OHKOCHI T, JUNG MH, SUEMITSU T, KINOSHITA T, OTSUJI T, SUEMITSU M

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

PROCEEDINGS OF THE IEEE

JUNG MH, PARK GH, YOSHIDA T, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Carbonaceous field effect transistor with graphene and diamondlike carbon

DIAMOND RELATED MATERIALS

TAKABAYASHI S, OGAWA S, TAKAKUWA Y, KANG HC, TAKAHASHI R, FUKIDOME H, SUEMITSU M, SUEMITSU T, OTSUJI T

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device

JAPANESE JOURNAL OF APPLIED PHYSICS

EL MOUTAOUAKIL A, KANG HC, HANDA H, FUKIDOME H, SUEMITSU T, SANO E, SUEMITSU M, OTSUJI T

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

JAPANESE JOURNAL OF APPLIED PHYSICS

JUNG MH, HANDA H, TAKAHASHI R, FUKIDOME H, SUEMITSU T, OTSUJI T, SUEMITSU M

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

JOURNAL OF MATERIALS CHEMISTRY

FUKIDOME H, TAKAHASHI R, ABE S, IMAIZUMI K, HANDA H, KANG HC, KARASAWA H, SUEMITSU T, OTSUJI T, ENTA Y, YOSHIGOE A, TERAOKA Y, KOTSUGI M, OHKOUCHI T, KINOSHITA T, SUEMITSU M

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

KANG HC, OLACVAW R, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, FUKIDOME H, SUEMITSU M, OTSUJI T