国家/地区 Korea（5）
关键词 GRAPHENE（5） CHARGE TRANSFER（3） DOPING（2）
STABILITY（2）
出版物 ACS NANO（2）
出版时间 2021（2）
机构 SUNGKYUNKWAN.（3）
作者 GU T（5）

Highly Efficient n-Type Doping of Graphene by Vacuum Annealed Amine-Rich Macromolecules

MATERIALS

SEO YM, JANG W, GU T, WHANG D

Millimeter-Scale Growth of Single-Oriented Graphene on a Palladium Silicide Amorphous Film

ACS NANO

KIRN HW, SONG I, KIM TH, AHN SJ, SHIN HC, AN BS, JANG Y, JEON S, KIM EH, KHADKA IB, GU T, WOO SH, WHANG D, KIM Y, YANG CW, AHN JR

2D Doping Layer for Flexible Transparent Conducting Graphene Electrodes with Low Sheet Resistance and High Stability

ADVANCED ELECTRONIC MATERIALS

SEO YM, CHO HJ, JANG HS, JANG W, LIM JY, JANG Y, GU T, CHOI JY, WHANG D

Defect-Free Mechanical Graphene Transfer Using n-Doping Adhesive Gel Buffer

ACS NANO

SEO YM, JANG W, GU T, SEOK HJ, HAN S, CHOI BL, KIM HK, CHAE H, KANG J, WHANG D

Super-Nernstian pH Sensor Based on Anomalous Charge Transfer Doping of Defect-Engineered Graphene

NANO LETTERS

JUNG SH, SEO YM, GU T, JANG W, KANG SG, HYEON Y, HYUN SH, LEE JH, WHANG D