国家/地区 Korea（8）
关键词
出版物 APPLIED PHYSICS LET.（2） CARBON（2） NANOTECHNOLOGY（2）
出版时间 2013（8）
机构 GWANGJU INST.（7）
作者 KANG CG（8）

Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al2O3

OPTICS EXPRESS

KANG CG, LEE SK, CHOE SH, LEE YG, LEE CL, LEE BH

Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

MICROELECTRONIC ENGINEERING

HWANG HJ, YANG JH, KANG SC, CHO C, KANG CG, LEE YG, LEE BH

Correlation between the hysteresis and the initial defect density of graphene

APPLIED PHYSICS LETTERS

CHO C, LEE YG, JUNG U, KANG CG, LIM S, HWANG HJ, CHOI H, LEE BH

Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I-V method

CARBON

LEE YG, KANG CG, CHO C, KIM Y, HWANG HJ, LEE BH

Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

NANOTECHNOLOGY

HWANG HJ, YANG JH, LEE YG, CHO C, KANG CG, KANG SC, PARK W, LEE BH

Effects of multi-layer graphene capping on Cu interconnects

NANOTECHNOLOGY

KANG CG, LIM SK, LEE S, LEE SK, CHO C, LEE YG, HWANG HJ, KIM Y, CHOI HJ, CHOE SH, HAM MH, LEE BH

Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors

APPLIED PHYSICS LETTERS

LEE YG, KIM YJ, KANG CG, CHO C, LEE S, HWANG HJ, JUNG U, LEE BH

Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors

CARBON

KANG CG, LEE YG, LEE SK, PARK E, CHO C, LIM SK, HWANG HJ, LEE BH