国家/地区 Korea（4）
关键词 SI QUANTUM DOT（4）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间 2018（2）
机构 KYUNG HEE UN.（4）
作者 KIM JM（4）

Remarkable enhancement of stability in high-efficiency Si-quantum-dot heterojunction solar cells by employing bis(trifluoromethanesulfonyl)-amide as a dopant for graphene transparent conductive electrodes

JOURNAL OF ALLOYS COMPOUNDS

SHIN DH, KWAK GY, KIM JM, JANG CW, CHOI SH, KIM KJ

Self-powered Ag-nanowires-doped graphene/Si quantum dots/Si heterojunction photodetectors

JOURNAL OF ALLOYS COMPOUNDS

SHIN DH, JANG CW, KIM JM, CHOI SH

Si-quantum-dot heterojunction solar cells with 16.2% efficiency achieved by employing doped-graphene transparent conductive electrodes

NANO ENERGY

KIM JM, KIM S, SHIN DH, SEO SW, LEE HS, KIM JH, JANG CW, KANG SS, CHOI SH, KWAK GY, KIM KJ, LEE H, LEE H

Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

ADVANCED MATERIALS

SHIN DH, KIM S, KIM JM, JANG CW, KIM JH, LEE KW, KIM J, OH SD, LEE DH, KANG SS, KIM CO, CHOI SH, KIM KJ