国家/地区 Korea（7）
关键词 CHEMICAL DOPING（2） GRAPHENE（2）
出版物 ADVANCED ELECTRONIC.（2） JAPANESE JOURNAL OF.（2）
出版时间 2019（7）
机构 GWANGJU INST.（5）
作者 LEE BH（7）

Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices

ACS APPLIED MATERIALS INTERFACES

SON M, KIM H, JANG J, KIM SY, KI HC, LEE BH, KIM IS, HAM MH

Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier

AIP ADVANCES

HEO S, KWON MG, LEE HI, KIM C, KIM SM, CHANG KE, LEE Y, LEE BH

Threshold Voltage Modulation of a Graphene-ZnO Barristor Using a Polymer Doping Process

ADVANCED ELECTRONIC MATERIALS

KIM SY, HWANG J, KIM YJ, HWANG HJ, SON M, REVANNATH N, HAM MH, CHO K, LEE BH

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Advantages of a buried-gate structure for graphene field-effect transistor

SEMICONDUCTOR SCIENCE TECHNOLOGY

LEE SK, KIM YJ, HEO S, PARK W, YOO TJ, CHO C, HWANG HJ, LEE BH

Piezoelectrically modulated touch pressure sensor using a graphene barristor

JAPANESE JOURNAL OF APPLIED PHYSICS

HWANG HJ, KIM SY, KANG SC, ALLOUCHE B, YANG JH, LEE BH

Chemically doped graphene based ternary field effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

KIM SY, KIM MB, HWANG HJ, ALLOUCHE B, LEE BH