国家/地区 Korea（3）
关键词 SCHOTTKY DIODE（3）
出版物
出版时间 2019（3）
机构
作者

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

ACS APPLIED MATERIALS INTERFACES

KE WC, TESFAY ST, SEONG TY, LIANG ZY, CHIANG CY, CHEN CY, SON W, CHANG KJ, LIN JC

Geometrically Enhanced Graphene Tunneling Diode With Lateral Nano-Scale

IEEE ELECTRON DEVICE LETTERS

YANG JH, SHIN JH, KIM S, PYO G, JANG AR, YANG HW, KANG DJ, JANG JE

Complementary Schottky diode formation with carbon buffer and p-doped single layer graphene on intrinsic SiC via fluorine intercalation

CARBON

LEE SY, KIM J, AHN S, JEON KJ, SEO H